2008. 10. 10 1/2 semiconductor technical data BD139 epitaxial planar npn transistor revision no : 1 general purpose application. features ? high current. (max. : 1.5a) ? dc current gain : h fe =40min. @i c =0.15a ? complementary to bd140. maximum rating (ta=25 ? ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.5 0.5 + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current i c 1.5 a base current i b 0.5 a collector power dissipation ta=25 ? p c 1.25 w tc=25 ? 10 junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter breakdown voltage v (br)ceo i c =30ma, i b =0 80 - - v dc current gain h fe (1) i c =5ma, v ce =2v 25 - - h fe (2) i c =150ma, v ce =2v 40 - 250 h fe (3) i c =500ma, v ce =2v 25 - - collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 0.5 v base-emitter voltage v be v ce =2v, i c =50ma - - 1.0 v
2008. 10. 10 2/2 BD139 revision no : 1 c ce(sat) v - i 0 10 20 30 40 50 60 70 80 90 100 dc current gain h fe 100 10 collector current i (ma) c collector current i (a) c h - i fe c 1000 0 50 100 150 200 250 300 350 400 450 500 10 1 0.1 0.01 0.001 110 0.01 0.1 1 10 100 dc 1ms 100 s safe operating area collecotr current i (a) c collector-emitter voltage v (v) ce ce(sat) saturation voltage v (mv) 025 0.0 5.0 10.0 15.0 20.0 2.5 7.5 12.5 17.5 175 150 125 100 75 50 p c - t c collector power dissipation p c (w) case temperature tc ( c) v ce =2v i c /i b =10 i c max. (continuou s) i c max. (pulsed) i c /i b =20 c ce(sat) v - i collector current i (a) c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 0.1 0.01 0.001 ce(sat) base-emitter voltage v (v) v be(sat) i c /i b =10 v be( on) v ce =5v
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